METHOD FOR MANUFACTURE OF PHOTODETECTOR Russian patent published in 2022 - IPC H01L31/18 

FIELD: semiconductor photo-electronics.

SUBSTANCE: invention relates to the field of semiconductor photo-electronics, namely to a technology of manufacture of photodetectors with high photosensitivity; it can be used for creation of both discrete and matrix photodetector devices (MPDD) for registration of objects in conditions of low light in visible and near IR ranges of the spectrum. A method for the manufacture of a photodetector based on a bipolar phototransistor on semiconductor substrate includes creation of doped areas of a collector, a base, and an emitter, formation of contact platforms to doped areas, while a layer of gate dielectric is formed on the surface of the base and on adjacent areas of p-n-transitions emitter-base and collector-base, to which a conductive layer of gate material overlapping the base area and p-n-transitions emitter-base and collector-base is applied, while a gate electrode is made with the possibility of access of a light stream to the base area and adjacent areas of p-n-transitions.

EFFECT: invention provides increase in a gain coefficient of a video signal of a photodetector, and simplification of its manufacturing technology.

3 cl, 5 dwg