FIELD: chemistry.
SUBSTANCE: invention relates to semiconductor coordinate detectors of ionising particles. In photodetector-radiation detector capacitive MOS diode cell new electric circuit is used, which employs intensifying MOS transistor enriched with p-, condenser, p-i-n-diode, poly silicon resistors, additional p-MOS and n-MOS transistors and coordinate sensitive photodetector cells of original design. Also used functionally integrated structure of p-i-n-diode, in which capacitance is located, separating high voltage applied to p-i-n-diode, and low supply voltage for CMOS of electronic circuits.
EFFECT: this allows increasing reliability, sensitivity and accuracy of coordinate sensitive radiation photodetector.
1 cl, 4 dwg
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