FIELD: physics.
SUBSTANCE: invention is related to microelectronics and may be used in production of integral microchips on active and passive wafers and elements of diffraction optics on curvilinear surfaces. Focuser of gas-discharge plasma contains cathode, meshed anode, insulation and high-voltage bushing. Cathode and mesh anode are arranged with curvature equal to curvature of processed item surface, and are installed at the distance of 15λ<h>50λ, where λ - length of free electron range in gas-discharge plasma flux.
EFFECT: creation of plasma flux for processing of curvilinear surfaces.
1 dwg
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