FIELD: physics, semiconductors.
SUBSTANCE: invention refers to semiconductor engineering. Substance of the invention: method of round silicon carbide wafer fabrication consists in monocrystal calibration, slicing, grinding, bevelling, annealing and polishing. Polishing process is four-staged: coarse polishing with coarse-grain diamond paste, fine polishing with fine-grain diamond paste, nanopolishing with silicasol suspension containing "detonation" nanodiamonds with grain size nor exceeding 1 mcm, nanopolishing with silicasol suspension not containing solid abrasive particles.
EFFECT: fabrication of polished silicon carbide wafer surfaces of roughness less than 0,5 nm.
2 cl
| Title | Year | Author | Number |
|---|---|---|---|
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|
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| PROCEDURE FOR SIMULTANEOUS PRODUCTION OF SEVERAL FACETED VALUABLE STONES OF SYNTHETIC SILICON CARBIDE - MOISSANITE | 2010 |
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| METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL STRUCTURES | 0 |
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SU723986A1 |
