FIELD: physics, semiconductors.
SUBSTANCE: invention refers to semiconductor engineering. Pre-epitaxial process of polished silicon carbide substrates involves consistent procedures as follows: monocrystal calibration, primary flat sawing, monocrystal slicing, wafer grinding, edge cutting, wafer polishing, chemical and hydromechanical washing of wafer surfaces, centrifuge drying and vacuum packing. Centrifuge drying or unpacking is followed with free wafer annealing in vacuum furnace at temperature 800-1200°C that precedes epitaxy.
EFFECT: drop of mechanical pressure and bending of substrates and additional decontamination of substrate edges.
2 cl
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SU1056805A1 |
