METHOD OF PRODUCING SILICON Russian patent published in 2009 - IPC C01B33/02 

Abstract RU 2345949 C2

FIELD: chemistry.

SUBSTANCE: through thermal decomposition of silicon nitride, silicon and commercial grade gaseous nitrogen are obtained, which are continuously extracted from the reaction zone. At temperature above 360°C, thermal decomposition is achieved in an electrolysis process using an electrolyte as the reaction zone, made from a molten halide of an alkali metal. At temperatures from 1450 to not more than 1800°C, thermal decomposition of silicon nitride is carried out in a vacuum at 100 Pa pressure. At temperatures from 1800 to 2700°C, thermal decomposition of silicon nitride is carried out at pressure equal to atmospheric pressure.

EFFECT: better quality of silicon with higher output.

3 cl, 7 ex

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RU 2 345 949 C2

Authors

Makarov Viktor Vasil'Evich

Makarov Evgenij Vasil'Evich

Kalashnikov Jurij Dmitrievich

Dates

2009-02-10Published

2007-03-13Filed