FIELD: technological processes.
SUBSTANCE: substrate is formed in the form of plate from hard single-crystal silicon. Specified substrate anisotropic etching and dicing is done to produce blades. In process of substrate formation upper surface of plate from hard single-crystal silicon is oriented in crystallographic plane (100). Separating grooves are formed with inclined surfaces that are oriented in crystallographic planes (111). Initial oxidation of specified inclined surfaces is carried out to produce layer of silicon dioxide with thickness from 0.5 to 0.7 mcm. Moreover, oxidation is carried out in atmosphere of moist oxygen. After substrate dicing blades surfaces are repeatedly oxidised, including surfaces oriented in crystallographic planes (101).
EFFECT: increase of blade mechanical strength.
7 dwg
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Authors
Dates
2009-02-20—Published
2007-03-21—Filed