METHOD OF FORMATION OF MICROSTRUCTURAL DEVICES WITH CROSS-METALIZED HOLES ON SINGLE CRYSTALLINE SILICON SURFACE Russian patent published in 2018 - IPC H05K3/42 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of microelectronics technology, and in particular to methods specifically designed for the manufacture or processing of microstructural devices boards or systems on monocrystalline silicon substrates. Invention can be used in the manufacture of multichip systems, as well as microwave devices. Method of forming boards microstructural devices with through-metallized holes on monocrystalline silicon substrates includes the metallization of the holes with two conductive layers and the formation of a hollow cavity under the crystal with a chamfer along the upper edge of the cavity, which is provided by combining the etching mode, etchant and the crystallographic features of silicon.

EFFECT: increase in reliability of the formed contact pads of the boards and the simplification of the process of the formation of the board with through metallized holes and blind holes for crystals of various sizes are provided.

4 cl, 19 dwg