FIELD: silicon grating.
SUBSTANCE: invention relates to a method for manufacturing a reflective diffraction silicon grating of the echelle type. The method for manufacturing a diffraction grating is that on the surface of a single-crystalline silicon (111) substrate with a misorientation angle α a protective mask is formed through which anisotropic chemical etching is carried out in a solution of potassium hydroxide, accompanied by the formation of a profile with an inclined plane of a groove with an angle of inclinationα and a protrusion on the ridge of a triangular profile, remove the protective mask, remove the silicon protrusions and apply a reflective coating. To form a protective mask, a layer of resist is applied to the surface of the substrate, in which a pattern of alternating parallel stripes is illuminated with a laser or electron beam and then developed by treatment with an aqueous solution of tetramethylammonium hydroxide or potassium hydroxide; a layer of chromium is applied to the entire surface of the substrate; a protective mask is formed by the method of explosive lithography, removing strips of photoresist with a deposited chromium layer in an organic solvent, after which anisotropic chemical etching is carried out in a solution of potassium hydroxide, accompanied by the formation of a profile with an inclined plane of a groove with an inclination angleα and a protrusion on the profile ridge, the protective chromium mask is removed by etching in a cerium etchant, and the protrusions are removed by anisotropic chemical etching.
EFFECT: simplification of manufacturing.
1 cl, 5 dwg, 1 tbl
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Authors
Dates
2023-12-18—Published
2023-06-20—Filed