FIELD: semiconductor devices production.
SUBSTANCE: scope of the invention is the production of semiconductor devices and integrated circuits, namely the production of silicon structures with dielectric insulation (SSDI). This effect is achieved by the fact that in the proposed method, the grooves are etched before the working plate is oxidized, then the surface of the plate with grooves is oxidized and the grooves are filled with a layer of polysilicon, and then the working plate is connected to the substrate plate with a frit based on quartz glass, and the thinning of the working plate carried out until the appearance of separating grooves, oxide and polysilicon in the grooves. In addition, in the proposed method, the angle of inclination of the walls of the separating grooves is symmetrical and lies within 83-87° relative to the working plane.
EFFECT: reducing labor intensity and increasing packing density.
2 cl, 5 dwg
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