FIELD: chemistry.
SUBSTANCE: nitrogen trifluoride is used in chemical industry as fluoridising agent and fuel oxidiser, in microelectronic industry for dry etching. Method of nitrogen trifluoride purification includes nitrogen trifluoride with solid sorbent and desorption thereof. According to invention, adsorption is enabled at temperature -40°C and above, while desorption is ensured with decompression between adsorber and collector and/or rise of temperature in desorber. Adsorption/desorption are repeated. Method involves repeated adsorption/ desorption cycles, until required product purity is provided. Method can be cascaded thus consisting of 2 and more adsorbers. Sorbent can be ceolites of pore size ca 5Å.
EFFECT: possibility to purify nitrogen trifluoride from inert impurities with using adsorption procedure and involving end product recovery from adsorbent by providing pressure difference in adsorption and desorption.
1 tbl, 1 dwg, 4 cl
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR PURIFICATION OF NITROGEN TRIFLUORIDE FROM TETRAFLUOROMETHAN | 2004 |
|
RU2248321C1 |
GASEOUS NITROGEN TRIFLUORIDE PURIFICATION METHOD | 2002 |
|
RU2206499C1 |
NITROGEN TRIFLUORIDE PURIFICATION PROCESS | 2006 |
|
RU2304080C1 |
METHOD OF TREATING GAS EMISSIONS CONTAINING FLUORINE COMPOUNDS | 2004 |
|
RU2288025C2 |
METHOD FOR PRODUCING CARBON DIOXIDE FROM FLUE GASES | 2016 |
|
RU2624297C1 |
METHOD FOR PURIFYING NITROGEN TRIFLUORIDE FROM CARBON TETRAFLUORIDE IMPURITY | 2020 |
|
RU2744357C1 |
PROCESS PLANATION OF INTEGRATED CIRCUITS | 1992 |
|
RU2024992C1 |
PROCESS OF PLASMA ETCHING OF CONTACT WINDOWS IN INSULATING AND PASSIVATING LAYERS OF DIELECTRIC BASED ON SILICON | 1992 |
|
RU2024991C1 |
SEPARATION OF MULTICOMPONENT GAS MIXTURES BY SHORT-CYCLE UNHEATED ADSORPTION WITH THREE-STAGE EXTRACTION OF TARGET GAS OF HIGH PURITY | 2015 |
|
RU2607735C1 |
ADSORBENT REGENERATION METHOD IN NATURAL GAS PROCESSING | 2022 |
|
RU2786205C1 |
Authors
Dates
2009-03-27—Published
2007-06-18—Filed