HYBRID INTEGRATED MICROWAVE CIRCUIT Russian patent published in 2012 - IPC H01L27/13 

FIELD: electricity.

SUBSTANCE: hybrid integrated microwave circuit contains dielectric substrate on the face of which metalised coating topological pattern is located, and on the rear - screen grounding metalised coating is located, herewith, dielectric substrate by its rear is placed on metal heat-dissipating base and connected with it by electro- and heat-conducting material; at least one metalised mounting spot electrically connected with screen grounding metalised coating; at least one transistor with leads; at least two condensers, located at different sides of transistor, where one of transistor leads is electrically connected with top armatures of condensers, its other two leads are connected with metalised coating topological pattern, bottom armatures of condensers are connected with metalised mounting spot and via it - with screen grounding metalised coating, herewith, each one of: transistor with leads, two condensers and mentioned electrical connections of one of transistor leads are made in the form of at least one single chip of monolithic integrated circuit on semi-insulating solid-state structure with preset doped layers, the mentioned single chip is located on metalised mounting spot, both condensers are of film-type, condenser top armatures, transistor leads and mentioned electrical connections of one of transistor leads are made in one layer of metalised coating of the mentioned single chip. In the latter, open-end metalised holes are made for electrical connection of bottom condenser armatures with metalised mounting spot. Transistor is made as field transistor with Schottky junction with width of lead - gate electrode not more than 500 micron, with preset values of saturation current not exceeding 150 mA and cutoff voltage. Each single chip of monolithic integrated circuit additionally contains resistive element with preset electric resistance. Resistive element is of film-type and made on the face of the mentioned single chip or made as doped layer included into the mentioned solid-state structure. Resistive element is located out of channel of field transistor with Schottky junction at distance not less than 20 micron from the lead - source electrode, where one of the ends of resistive element is electrically connected with top armature of one of condensers and the other - with bottom armature of this condenser. Electrical connection of one of the ends of resistive element of with condenser top armature is made in the mentioned one layer of single chip metalised coating, and electrical connection of the other of the ends of resistive element and bottom condenser armatures are made in other layer of this metalised coating, and open-end metalised holes in the mentioned single chip are made out of condensers location area.

EFFECT: better electrical and mass-dimensional characteristics and their reproducibility due to functionality enhancement of hybrid integrated microwave circuit, better fabricability and reliability.

3 cl, 3 dwg