SHF PHASE SHIFTER Russian patent published in 2009 - IPC H01P1/185 

FIELD: physics.

SUBSTANCE: SHF phase shifter contains two transmission lines with identical wave impedances, one is intended for SHF inlet of signal, another - for output, two field transistors with the Schottky barrier which shutters are joined among themselves by conductor and are joined unisource constant driving voltage, and two pieces of microstrip line. Thus both pieces of the microstrip lines are executed with identical length and width and are located parallelly each other with backlash in the breadth equal more than five times of conductor width, pairing shutters of field transistors with the Schottky barrier and less than width of piece of the microstrip line. The conductor is located in backlash, thus pieces of microstrip lines are related by electromagnetic field. The drain region of the first field transistor with the Schottky barrier is joined to one of the extremities of the first piece of microstrip line, sources of the first and second field transistors with the Schottky barrier are earthed, other extremity of the first piece of microstrip line is joined to transmission line on inlet, sink of the second field transistor with the Schottky barrier is joined to one of the extremities of the second piece of microstrip line, its other extremity is joined to transmission line on exit.

EFFECT: achievement of linear change of phase at change of driving voltage and reflectivity decrease on inlet and output of SHF phase shifter, at maintenance of its mass and dimensions parameters.

2 cl, 4 dwg, 3 ex