SUPERCAPACITOR BASED ON CMOS TECHNOLOGY Russian patent published in 2017 - IPC H01G11/24 H01G11/84 

Abstract RU 2629364 C1

FIELD: electricity.

SUBSTANCE: supercapacitor contains two electrodes, a dielectric layer arranged between them, conformally disposed on the lower electrode, wherein the upper electrode is conformally disposed on the dielectric layer, the lower electrode is formed on a profile-structured base of porous alumina or titanium.

EFFECT: increasing the energy density of the supercapacitor, increasing the formation reproducibility of the structure with adjustable values of capacitance and stored energy density.

3 cl, 5 dwg

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RU 2 629 364 C1

Authors

Belov Aleksej Nikolaevich

Gusev Evgenij Eduardovich

Dyuzhev Nikolaj Alekseevich

Zolotarev Vitalij Iosifovich

Kireev Valerij Yurevich

Dates

2017-08-29Published

2016-12-07Filed