METHOD FOR MEASUREMENT OF RADIATION LEVEL BY HIGH ENERGY-GAP SEMICONDUCTOR DETECTORS AND DEVICE FOR ITS REALISATION Russian patent published in 2009 - IPC G01T1/24 

FIELD: physics, nuclear physics.

SUBSTANCE: inventions are related to the field of nuclear physics and are intended for application in development and manufacturing of different systems for radiation level measurements, dosimetres, indicators of excess radiation background. Method for measurement of radiation level by high energy-gap semiconductor detectors includes registration of ionising radiation quanta by detector, transformation of signal received from detector and its preliminary amplification, further transformation of received signal in computing device. Output analog signal of detector is preliminarily amplified in transforming amplifying cascade by means of signal supply from outlet of semiconductor detector to inlet of charge-sensitive pre-amplifier arranged in the form of composite cascade from field and first bipolar transistors connected n compliance with cascade scheme with differential inlets, produced signal is transformed into pulse voltage with generation of signal of quasi Gausse type in generating amplifying cascade on bipolar transistors, passing signal through differentiating and integrating cascades that operate in microcurrent mode and are arranged in the form of single circuit. Device for measurement of radiation level comprises semiconductor detector connected to inlet of pre-amplifier, and computing device. Semiconductor detector arranged on the basis of high energy-gap semiconductor material is installed in volume compound coupled with the main circuit of transforming cascade, at that outlet of semiconductor detector is joined with inlet of charge-sensitive pre-amplifier that consists of composite cascade of the field and the first bipolar transistor connected in compliance with cascade scheme with differential inputs, to which the second bipolar transistor is connected differentially, and outlet of this cascade is connected to inlet of generating amplifying cascade on bipolar transistors connected according to scheme of composite transistor and frequency-dependent circuit of feedback.

EFFECT: reduced time for measurement of radiation background, lower mass and dimensional parametres of devices intended for measurement of radiation, and lower effect of hardness course at measurement result.

4 cl, 2 dwg