GALLIUM ARSENIDE OPERATIONAL AMPLIFIER WITH A LOW ZERO-BIAS VOLTAGE Russian patent published in 2022 - IPC H03F3/45 

FIELD: analog microelectronics.

SUBSTANCE: invention relates to the field of analog microelectronics and can be used in the structure of analog-to-digital interfaces and IP modules of communication and telecommunications systems that allow operation under conditions of exposure to penetrating radiation, low or high temperatures. The device contains the first (1) and second (2) inputs connected to the inputs of the input differential stage (3) on field-effect transistors with a control p-n junction, the output of the device (4), the first (5) and second (6) current outputs of the input differential stage (3), wherein the first (5) current output is connected to the first (7) power supply bus, the common source circuit (8) of the input differential stage (4) is connected to the second (9) power supply bus through the reference current source (10 ), the second (6) current output of the input differential stage (3) is connected to the emitter of the output bipolar p-n-p transistor (11) of the intermediate stage, the base of which is connected to the bias voltage source (12), and the collector through the reference current source (13) of the intermediate of the cascade is connected to the second (9) clay of the power supply, the first (14) auxiliary transistor, the output buffer amplifier (15), the low-resistance output of which is the output (3) of the device. The reference current source (10) is made in the form of two identical and parallel connected auxiliary reference current sources. The reference current source (13) of the intermediate stage is implemented on cascode composite transistors and is identical to the first (16) and second (17) auxiliary current reference sources.

EFFECT: creation of an operational amplifier with a "kinked" cascode, implemented on JFET gallium arsenide field-effect transistors with a control p-n junction and bipolar GaAs p-n-p transistors, which has low values of the systematic component of the zero bias voltage.

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