RECEPTION METHOD OF CONTACT INTERCONNECTIONS OF DIODE LASERS AND STRIPS Russian patent published in 2009 - IPC H01L21/52 

FIELD: physics; semiconductors.

SUBSTANCE: invention concerns quantum electronics, semi-conductor and optoelectronic processing techniques, in particular manufacturing techniques of coherent radiators for systems of pumping of powerful solid-state lasers, creation of medical equipment, laser processing equipment and other purposes. Essence of the invention consists in the reception method of contact interconnections of diode lasers and strips, including drawing of a contact sheet on a mounting surface with, at least, two metallic layers, the last one is a solder layer, active component adjustment on a metallic layer, its soldering at heating up in the regenerative environment in the conditions of mechanical load on an element with the subsequent cooling, in vacuum on the nickelised mounting surface of the contact sheet executed from copper, consistently layer solder on the basis of SnPb and in addition a layer of indium (In) with thickness according to 4-6 microns and 0.5-1.0 microns, soldering is carried out in the accelerated (dynamic) mode with heating/cooling time t=3-5 minutes at temperature T_max>T_liq+(50-70)°C, where T_liq - temperature of solder liquidus.

EFFECT: simplification, increase of reproducibility and acceleration of process of installation of an active component, improvement of quality and dependability of contact interconnection, increase in accuracy of its adjustment and alignment, improvement of thermocompensating parametres of an assembly sheet, and also laser basic performances - thermal modes, stabilising of wave length and increase of power output, decrease of threshold currents.