METHOD OF MAKING THIN-FILM DIODE LASER BASED ON THIN MULTIPASS EMITTING p-n HETEROSTRUCTURE Russian patent published in 2010 - IPC H01S5/00 

FIELD: physics.

SUBSTANCE: to achieve the given technical result, the following processing steps are carried out: a thin epitalxial laser p-n heterostructure with wide-gap emitters, waveguide reemitting layer and a thin active region is grown on a growth substrate, where the quantum wells can be used as the said thin active region, ohmic contacts are made on the free surface of the p-n heterostructure, between which a radiation reflecting coating of oxide with metal is made on its surface electrically connected to the contacts, a carrier-substrate with metallic ohmic contacts on both large surfaces are made, the p-n heterostructure is placed on the carrier-substrate by soldering or gluing with conducting adhesive, that way providing their mechanical and electrical connection, the growth substrate is removed, ohmic contacts are made on the freed up surface of the p-n heterostructure, the obtained structure is divided into separate emitting chips, the chips are placed in a device housing, the said ohmic contacts on both surfaces of the p-n heterostructure are made in form of strip ohmic contacts of the same type on both surfaces of different conduction type parallel each other and lying parallel or perpendicular the base section of the growth substrate. The structure is divided into separate emitting chips in one direction across the strip ohmic contacts thereby creating mirror faces perpendicular the direction and the plane of these contacts in the other direction along the strip contacts. The faces can also be non-mirrored. The p-n heterostructure is placed on the carrier-substrate such that, the edges of the base sections of the carrier-substrate and growth substrate are parallel, and in case of liquid etching of the growth substrate after placing the p-n heterostructure onto the carrier-substrate, butt ends of joined plates are covered on the entire perimetre by a composition which is chemically resistant to liquid etching agents.

EFFECT: invention enables making a device with lower threshold and operating current, with wide dynamic range of operation, with external quantum efficiency and radiation power higher than in known similar devices, with high yield ratio, as well as low deterioration.

9 cl, 10 dwg