FIELD: instrument engineering.
SUBSTANCE: invention refers to crucible aluminium evaporators used in molecular-beam epitaxy. A crucible evaporator accommodates a body made of boron nitride and comprising a top-flanged envelope with pyrolitic graphite coating. The flange represents a petticoat. And the coating applied on the petticoat face is single-layered and made of pyrolitic graphite of layer thickness 20-50 mcm. The envelope face is not covered.
EFFECT: prevented aluminium leakage in molecular-beam epitaxy.
4 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| ELECTRIC CONTACT OF HEATER OF SEMICONDUCTOR SUBSTRATE OF GROWTH MANIPULATOR OF VACUUM CHAMBER FOR GROWTH OF SEMICONDUCTOR HETEROSTRUCTURES | 2009 |
|
RU2425431C1 |
| SUBSTRATE FOR GROWING OF EPITAXIAL LAYERS OF GALLIUM NITRIDE | 2007 |
|
RU2369669C2 |
| SOURCE OF MOLECULAR BEAMS | 0 |
|
SU1705426A1 |
| METHOD OF PRODUCING PARTS FROM PYROLYTIC BORON NITRIDE | 0 |
|
SU1791429A1 |
| METHOD OF GROWING AlN MONOCRYSTAL AND APPARATUS FOR REALISING SAID METHOD | 2011 |
|
RU2468128C1 |
| DEVICE FOR ELECTRIC-LIQUID EPITAXY | 0 |
|
SU807691A1 |
| METHOD FOR GROWING SEMICONDUCTOR FILM | 2023 |
|
RU2814063C1 |
| MODULATION-DOPED FIELD-EFFECT TRANSISTOR | 2013 |
|
RU2539754C1 |
| METHOD FOR PRODUCING PLATES OF GALLIUM NITRIDE OF SODIUM CRYSTAL | 2018 |
|
RU2683103C1 |
| CRUCIBLE FOR SILICON CRYSTALLISATION | 2006 |
|
RU2394944C2 |
