FIELD: electric engineering.
SUBSTANCE: invention is related to electronic engineering, namely, to technology of materials for creation of information display and processing devices. As material of substrates used for growing of epitaxial layers of gallium nitride, a row of compounds is suggested - single crystals of intermetallides, selected from group that includes silicide of magnesium (MnSi), palladium silicide (Pd2Si), manganese stannate (Mn3Sn), iron stannate (Fe3Sn), vanadium phosphide (VP), aluminium zirconide (Zr3Al) with moderate melt temperatures.
EFFECT: advantages of this class of compounds compared to available ones consist in higher quality of gallium nitride films grown on substrates from mentioned compounds.
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