ELECTRIC CONTACT OF HEATER OF SEMICONDUCTOR SUBSTRATE OF GROWTH MANIPULATOR OF VACUUM CHAMBER FOR GROWTH OF SEMICONDUCTOR HETEROSTRUCTURES Russian patent published in 2011 - IPC H01L21/36 

FIELD: electricity.

SUBSTANCE: in an electric contact of a heater of a semiconductor substrate of a growth manipulator of a vacuum chamber for growth of semiconductor heterostructures, comprising a contact screw with a nut, at the same time the heater comprises a base with holes for screws, made of a pyrolytic boron nitride, and a heating spiral arranged on it as made of pyrolytic graphite, the contact screw and the nut are made of the metal, at the same time the nut is spring-loaded relative to the heater base with a spring element made of a pyrolytic boron nitride. The spring element may be arranged in the form of a disc with a central hole, where a screw is installed with a gap, at the same time the disc contacts with the nut, and between the disc and the heater base there is a thrust ring that contacts with the disc periphery.

EFFECT: simplified manufacturing of an electric contact and possibility to considerably reduce its dimensions, smaller dimensions of a growth manipulator and reduced minimum possible distance between a semiconductor substrate and a heater, which makes it possible to reduce heat release in a vacuum chamber.

4 cl, 6 dwg