MODULATION-DOPED FIELD-EFFECT TRANSISTOR Russian patent published in 2015 - IPC H01L29/772 B81B1/00 

FIELD: physics.

SUBSTANCE: invention relates to electronic engineering. A modulation-doped field-effect transistor comprises a flange, a pedestal, a heteroepitaxial structure, a buffer layer, a source, a gate, a drain and ohmic contacts. The pedestal is made of a heat-conducting layer of polycrystalline diamond. A transistor chip is placed on top of the pedestal, said chip comprising series-arranged base substrate made of GaAs, buffer layers, heteroepitaxial heterostructure based on AlGaAs/GaAs, and on the surface of the heteroepitaxial structure, between the source, the gate and the drain, there is a dielectric coating layer and two buffer layers arranged in series, said layers being made of hafnium dioxide and a metal oxide, wherein the buffer layers have total thickness of 1.0-4.0 nm; in the gate region, the buffer layers are placed under the gate, directly on an epitaxial structure in the form of a gradient layer of n-type GaAs.

EFFECT: reduced effect of DX centres on device characteristics, high mobility of majority charge carriers, providing minimum leakage of gate current, improved heat removal from the pedestal, achieving the lowest noise coefficient in the GHz range, high efficiency and reliability of high-power field-effect transistors.

8 cl, 3 tbl