METHOD FOR GROWING SEMICONDUCTOR FILM Russian patent published in 2024 - IPC H01L21/20 

FIELD: molecular beam epitaxy technology.

SUBSTANCE: invention relates to methods for growing epitaxial heterostructures, allowing control of liquid metal directly during growth on the growth surface using molecular beam epitaxy technology. A method for growing a semiconductor film involves growing a semiconductor film in the form of an AlGaN-based heterostructure on a substrate by molecular beam epitaxy under metal-enriched growth conditions and measuring with a pyrometer the intensity of infrared radiation emitted by the surface of the growing semiconductor film. Based on changes in intensity, the metal flows and phase times of the pulsed process of growing a semiconductor film are adjusted. When the intensity decreases to a given value, film growth is stopped and excess metal is desorption from the surface of the grown film until the intensity of infrared radiation is restored to the initial level, after which the phases of growing the semiconductor film and desorption of excess metal from the surface of the grown film are repeated.

EFFECT: ability to control the accumulation of liquid metal (aluminium, gallium, indium) on the surface of a growing epitaxial semiconductor film and prevent the accumulation of excess metal during film growth.

7 cl, 2 ex