FIELD: nanotechnology.
SUBSTANCE: invention relates to the technology of nanoelectronic devices based on graphene. The electronic device based on graphene comprises a graphene layer having a first work function and a metal oxide film located on the graphene layer, and the metal oxide film has a second work function exceeding than the first work function. The electrons are transferred from the graphene layer to the metal oxide film, forming a layer of accumulation of holes in the graphene layer.
EFFECT: invention eliminates damage of the graphene lattice and the appearance of defects that impair the operational characteristics of the device.
33 cl, 16 dwg
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