METHOD OF PRODUCTION OF HIGH PURITY COBALT FOR SPUTTERING TARGETS Russian patent published in 2009 - IPC C22B23/02 C22B5/12 C22B9/22 

FIELD: metallurgy.

SUBSTANCE: processed material in form of cobalt powder is put into reactor made out of refractory material and heated to temperature 700-750°C; further de-hydrated hydrogen is run through reactor at rate of supply 300 ml/min during 60 min for heterogenic reduction of cobalt chloride to powder of metallic cobalt. Reduced powder of metallic cobalt is heated to temperature 600-650°C in the same reactor; flow of chlorine is run through the reactor at rate of supply 100 ml/min during 30 min for partial chlorination of metal cobalt with preferential formation of chlorides of volatile impurities. Powder of metallic cobalt undergone partial chlorination is pressed into a rod and is subject to electronic vacuum zone re-crystallisation for production of crystals of high pure cobalt. Produced crystals are subject to electronic re-melting in the crystalliser cooled from both sides to whole depth not less, than two times till obtaining a flat ingot with structure of high quality.

EFFECT: great increase of purity of cobalt designed for fine film metallisation by magnetron sputtering of targets as cobalt purity substantially determines electro-physical parametres of applied thin layers.

1 dwg, 1 tbl, 1 ex