FIELD: metallurgy.
SUBSTANCE: procedure consists in purification of source rods of metal titanium produced by iodide procedure in reactor. Rods are purified in a flow of dehydrated chloride at temperature 500°C. Further, rods of titanium are subjected to vacuum zone re-crystallisation to production of poly-crystals of titanium of high purity and then to electron vacuum melt for obtaining required by weight amount of poly-crystals of high purity titanium in a flat crystalliser. There is produced a flat ingot, melt on each side through total depth.
EFFECT: increased purity of titanium used for fabrication of targets applied for thin-film metallisation in micro-electronics.
1 tbl, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCTION OF HIGH PURITY TITANIUM FOR SPUTTERED TARGETS | 2008 |
|
RU2370559C1 |
| PROCEDURE FOR PRODUCTION OF HIGH PURITY TUNGSTEN FOR SPUTTERING TARGET | 2010 |
|
RU2434960C1 |
| PROCEDURE FOR PRODUCTION OF HIGH PURITY COBALT FOR SPUTTERING TARGET | 2010 |
|
RU2434955C1 |
| PROCEDURE FOR PRODUCTION OF HIGH PURITY MOLYBDENUM FOR SPUTTERING TARGET | 2010 |
|
RU2434959C1 |
| METHOD FOR OBTAINING HIGH-PURITY NICKEL FOR SPUTTERING TARGETS | 2010 |
|
RU2446219C1 |
| METHOD OF PRODUCTION OF HIGH PURITY COBALT FOR SPUTTERING TARGETS | 2008 |
|
RU2370558C1 |
| METHOD FOR PRODUCTION OF HIGHLY PURE MOLYBDENUM FOR SPATTERING TARGETS AND DEVICE FOR ITS REALISATION | 2008 |
|
RU2375479C1 |
| METHOD TO PRODUCE HIGH-PURITY NICKEL FOR DISPERSED TARGETS AND DEVICE TO THIS END | 2008 |
|
RU2377330C1 |
| METHOD FOR PRODUCTION OF HIGHLY PURE TUNGSTEN FOR SPATTERING TARGETS AND DEVICE FOR ITS REALISATION | 2008 |
|
RU2375480C1 |
| METHOD TO PRODUCE HIGH-PURITY NICKEL FOR DISPERSED TARGETS AND DEVICE TO THIS END | 2008 |
|
RU2377331C1 |
