NANOELECTRONIC SEMICONDUCTOR MIXER DIODE Russian patent published in 2009 - IPC H01L29/72 B82B1/00 

FIELD: electricity.

SUBSTANCE: invention may be used for mixing of signals in radio engineering and radio measurement equipment, and in microelectromechanical systems. In nanoelectronics semiconductor diode, comprising two contact areas made of alloyed GaAs, spacers made of GaAs, and heterostructure made of three alternating areas: potential barriers made of Al_yGa_1-yAs, where y is a molar fraction of Al, and a potential pit arranged in between, differing with a width of prohibited area and layer thickness, potential pit is made of GaAs, and when Si concentration in contact areas makes 7x10¹⁸-10x10¹⁸ l/cm³, thickness of pit layer amounts from 6 to 14 atomic layers, molar fraction of Al in barrier layers makes from 0.4 to 1, barrier thickness makes from 6 to 30 atomic layers.

EFFECT: invention makes it possible to provide for creation of a mixer diode with a current-voltage characteristic shape aimed at widening of working band of frequencies with simultaneous increase of dynamic range and reduction of losses of mixer transformation.

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