METHOD OF DETERMINING RESISTANCE TO RADIATION AND TEMPERATURE EFFECTS OF NANOELECTRONIC RESONANT-TUNNELING DIODE (RTD) BASED ON MULTILAYER ALGAAS (ALUMINIUM, GALLIUM, ARSENICUM) SEMICONDUCTOR HETEROSTRUCTURES Russian patent published in 2017 - IPC G01R31/28 

FIELD: physics.

SUBSTANCE: invention can be used for determination of resistance to radiation and temperature effects of nanoelectronic resonant-tunneling diode. Summary of invention is, that method of determining resistance to radiation and temperature effects of nanoelectronic resonant-tunneling diode (RTD) based on multilayer AlGaAs (aluminium, gallium, arsenicum) semiconductor heterostructures consists in successive application of cycles of radiation effects to RTD batch, dose of which gradually is accumulated in each cycle, and thermal effects, exposure time of which gradually increases, in order to obtain caused by change of volt-ampere characteristic (VAC) in working area of no less than by order greater than measurement error, in determining of number of cycles of radiation and temperature effects by setting curve of corresponding parameter fault for specific application of RTD, construction of VAC, in determining based on analysis of VAC of RTD degradation speed and in determination of RTD resistance to radiation and temperature effects based on obtained RTD degradation speed.

EFFECT: enabling determination of resistance to radiation and temperature effects of nanoelectronic resonant-tunneling diode.

1 cl, 3 dwg