NANOELECTRONIC SEMICONDUCTOR RECTIFYING DIODE Russian patent published in 2011 - IPC H01L29/861 B82B1/00 

Abstract RU 2415494 C1

FIELD: electricity.

SUBSTANCE: in nanoelectronic semiconductor rectifying diode made of two contact areas produced from alloyed GaAs with concentration of Si 1×1018…1×1019 1/cm3, spacers made of GaAs, and heterostructure including three alternating areas: potential barriers made of AlyGa1-yAs, where y - molar share Al, with thickness from 1.70 to 8.48 nm with molar share Al from 0.4 and 1 and potential pit arranged between them with thickness of 7.91…12.44 nm, made of GaAs, ratio of thicknesses of layers of potential barriers is within the limits of 1.3…5 at appropriate ratio of molar shares Al, within the limits of 1.6…2.5.

EFFECT: development of a rectifying diode with shape BAX, making it possible to increase rectifier output voltage.

3 dwg

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RU 2 415 494 C1

Authors

Fedorov Igor' Borisovich

Shashurin Vasilij Dmitrievich

Narajkin Oleg Stepanovich

Ivanov Jurij Aleksandrovich

Meshkov Sergej Anatol'Evich

Fedorenko Ivan Aleksandrovich

Bashkov Valerij Mikhajlovich

Fedorkova Nina Valentinovna

Sinjakin Vladimir Jur'Evich

Dates

2011-03-27Published

2010-02-16Filed