NANOELECTRONIC SEMICONDUCTOR RECTIFYING DIODE Russian patent published in 2011 - IPC H01L29/861 B82B1/00 

FIELD: electricity.

SUBSTANCE: in nanoelectronic semiconductor rectifying diode made of two contact areas produced from alloyed GaAs with concentration of Si 1×10¹⁸…1×10¹⁹ 1/cm³, spacers made of GaAs, and heterostructure including three alternating areas: potential barriers made of Al_yGa_1-yAs, where y - molar share Al, with thickness from 1.70 to 8.48 nm with molar share Al from 0.4 and 1 and potential pit arranged between them with thickness of 7.91…12.44 nm, made of GaAs, ratio of thicknesses of layers of potential barriers is within the limits of 1.3…5 at appropriate ratio of molar shares Al, within the limits of 1.6…2.5.

EFFECT: development of a rectifying diode with shape BAX, making it possible to increase rectifier output voltage.

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