HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR BASED ON SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2022 - IPC H01L29/778 

FIELD: electronics industry.

SUBSTANCE: invention is intended for the development and production of a wide class of microwave electronic devices, including radar devices. A microwave field-effect transistor on a semiconductor heterostructure contains a semiconductor substrate and a sequence of at least one layer of wide-band and one layer of narrow-band materials with specified characteristics of an AlGaAs-InGaAs-GaAs type semiconductor heterostructure, source, gate, drain electrodes located on the front side of the semiconductor heterostructure. At the same time, the mentioned semiconductor heterostructure is made in the form of a sequence of the following main layers: a GaAs buffer layer with a thickness of more than 200.0 nm, a group of barrier layers Al_xGa_1-xAs, in the form of an i-p-i system of barrier layers with a thickness of 100.0-200.0 nm, 1.0-20.0 nm, 2.0-15.0 nm, respectively, with a concentration of an alloying, acceptor impurity of more than 2.0×10¹⁸ cm^-3, located on the front side of the semiconductor substrate, a group of conductive layers forming a field-effect transistor channel, consisting of at least one - δn-layer doped with a donor impurity with a surface density of the alloying impurity (1.0-30.0)×10¹² cm, spacer i-layer Al_xGa_1-xAs, 1.0-5.0 nm thick, channel layer InyGai_yAs proper, or a group of layers of the latter, each with a different quantitative composition (y) of the chemical element indium (In), equal to or less than 1.0 mole fractions, with a total thickness of more than 3.0 nm, while the δn-layer is located on the group of barrier layers Al_xGa_1-xAs, the spacer i-layer is between the δn-layer and the channel layer itself.

EFFECT: invention provides an increase in the gain and output power.

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