NANOELECTRONIC SEMICONDUCTOR RECTIFIER DIODE Russian patent published in 2011 - IPC B81B1/00 H01L29/861 

FIELD: physics, radio.

SUBSTANCE: invention can be used to rectify alternating current in radio apparatus, radio measuring devices and systems. The nanoelectronic semiconductor diode consists of double-contact regions made from doped GaAs with Si concentration of 1×10¹⁸…1×10¹⁹1/cm³, spacers made from GaAs, and heterostructures in three alternating regions: potential barriers made from Al_yGa_1-yAs; where y is molar ratio of Al, with thickness between 1.70 and 8.48 nm with molar ratio Al from 0.4 to 1 and a potential well in between, having thickness of 7.91…12.44 nm, made from GaAs. The ratio of thickness of the potential barriers lies in the range of 1.3…5.

EFFECT: invention enables design of a rectifier diode with a current-voltage curve which enables to increase output voltage of the rectifier by 5…10 times with amplitude of the input alternating voltage U_in approximately equal to 0,2 V.

3 dwg