LASER RADIATION PHOTOCONVERTER Russian patent published in 2018 - IPC H01L31/304 H01L31/10 

FIELD: electronics.

SUBSTANCE: invention relates to semiconductor electronics. Photoconverter includes a n-GaAs substrate (1), which is successively coated with a n-AlGaAs back barrier layer (2), a n-GaAs base layer (3), an emitter layer (4) of p-GaAs, layer (5) of a wide-gap window of n-Al_xGa_1-xAs, the wide-gap stop layer (6) of n-Al_yGa_1-yAs and the contact sublayer (7) of p-GaAs. Thickness of the layer (5) of the wide-gap window of n-Al_xGa_1-xAs, where 0.15<x<0.25, is not less than 1 μm, and in the wide-gap stop-layer (6) from n-Al_yGa_1-yAs the concentration of aluminum is 0.6<y<0.7.

EFFECT: photodetector according to the invention has a high level of quantum efficiency in the range of 800-860 nm, as well as a reduced series resistance.

3 cl, 3 dwg