FIELD: physics.
SUBSTANCE: invention relates to the technology of semiconductor devices and microchips. Method of forming complete dielectric insulation of elements in a semiconductor involves formation of a dielectric layer around the surface of elements through its deformation shift relative the solid semiconductor after irradiation with ions of gaseous atoms and post-radiation burning in a chemically active medium.
EFFECT: invention increases packing density of elements due to reduction of the thickness of the insulating layer, simplifies the method by doing away with several operations and sophisticated equipment, and also improves electrical characteristics of the microchips due to complete dielectric insulation of the bulk of the elements.
6 cl, 4 dwg
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