FIELD: physics.
SUBSTANCE: invention relates to the technology of semiconductor devices and microchips. Method of forming complete dielectric insulation of elements in a semiconductor involves formation of a dielectric layer around the surface of elements through its deformation shift relative the solid semiconductor after irradiation with ions of gaseous atoms and post-radiation burning in a chemically active medium.
EFFECT: invention increases packing density of elements due to reduction of the thickness of the insulating layer, simplifies the method by doing away with several operations and sophisticated equipment, and also improves electrical characteristics of the microchips due to complete dielectric insulation of the bulk of the elements.
6 cl, 4 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR RADIATION-INDUCED GAS SPALLING OF FRAGILE CRYSTALLINE MATERIALS (ALTERNATIVES) | 2005 |
|
RU2297691C2 |
| METHOD OF ION DOPING OF SOLID BODIES | 2000 |
|
RU2193080C2 |
| METHOD FOR FLEXIBLE PRINTED BOARDS MANUFACTURING | 2008 |
|
RU2356194C1 |
| METHOD OF MAKING CONDUCTING TRACKS ON POROUS POLYMER FILM | 2008 |
|
RU2390978C1 |
| PROCESS OF MANUFACTURE OF SPECIMEN FOR ELECTRON MICROEXAMINATION AND GEAR FOR ITS REALIZATION | 2000 |
|
RU2186359C2 |
| METHOD OF DEPOSITION OF PROTECTIVE COATINGS ON DETAILS MADE OUT OF REFRACTORY ALLOYS | 2000 |
|
RU2264480C2 |
| PROCEDURE TO PREPARE SPECIMENS OF CURRENT-CONDUCTING MATERIALS FOR TRANSMISSION ELECTRON MICROSCOPY AND FACILITY FOR ITS REALIZATION | 2001 |
|
RU2216720C2 |
| METHOD FOR GENERATION OF PROTECTED INFORMATION CARRIER | 2006 |
|
RU2318677C2 |
| CARBON NANOSTRUCTURE PREPARATION METHOD | 2006 |
|
RU2319663C1 |
| METHOD OF DIFFRACTION PERIODIC MICROSTRUCTURE MAKING BASED ON POROUS SILICON | 2015 |
|
RU2593912C1 |
