SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2009 - IPC H01L33/00 

FIELD: physics; conductors.

SUBSTANCE: strained semiconductor heterostructure comprises an injection zone, which includes a first emitter layer of p-type conduction, and a second emitter layer of n-type conduction, as well as a light generating layer between the first emitter layer and the second emitter layer. Between the light generating layer and the second emitter layer there is an electron trapping region, which has a trapping layer next to the second emitter layer, and a limiting layer lying next to the said electron trapping layer. According to the invention, thickness and material of the limiting layer and trapping layer are selected such that, energy difference between one of the local energy levels for electrons in the trapping layer and the bottom of the conduction band of the second emitter layer is equal to optical phonon energy. According to the invention, light-emitting diodes can be made from the heterostructure described above.

EFFECT: design of a strained semiconductor heterostructure with high total power of generating light.

12 cl, 6 dwg