EMITTING HETEROSTRUCTURE HAVING INTERNAL INJECTION AMPLIFICATION Russian patent published in 2016 - IPC H01L33/00 

FIELD: physics, optics.

SUBSTANCE: invention relates to semiconductor devices and more specifically to light-emitting diodes and lasers based on heterostructures. The invention proposes to include an additional narrow-bandgap layer into the active region of a known type of emitting p-n heterostructures. Said layer functions as an absorber of radiation from a wider bandgap radiative recombination region, as a result of which nonequilibrium charge carriers arise in said narrow-bandgap layer. Parameters of the narrow-bandgap layer are such that they enable accumulation of charge carriers therein and subsequent thermal emission of said carriers into the wide-bandbap layer of the active region. The emitted carriers recombine again in the wide-bandgap layer and the described process is repeated. This leads to a marked increase in concentration of minority charge carriers in both the narrow-bandgap and the wide-bandgap layers of the active region. The increase in concentration of carriers increases the external quantum efficiency of emitting devices based on such a heterostructure. Nonequilibrium carriers emitted from the narrow-bandbap layer may lead to self-cooling of said layer, thereby improving conditions for radiative recombination therein.

EFFECT: high efficiency of devices.

6 cl, 2 dwg