LIGHT-EMITTING HETEROSTRUCTURE WITH QUANTUM WELLS OF COMBINED PROFILE Russian patent published in 2020 - IPC H01L33/04 H01L33/32 

FIELD: lighting.

SUBSTANCE: invention relates to semiconductor light sources based on heterostructures of In_xGa_1-xN/GaN type, mainly to light-emitting diode sources. In a light-emitting heterostructure with quantum wells of a combined profile, which contains a sapphire substrate, with a buffer layer made of undoped GaN, an n-emitter layer made in the form of a layer of GaN doped with silicon, and a p-emitter ply of GaN doped with magnesium, active region located between the n-emitter and p-emitter layers consists of several quantum wells with a combined profile obtained by superimposing two or more quantum wells of the rectangular profile, the geometric centers of which are aligned and located on the axial line of the quantum well of the combined profile. Each quantum well with a combined profile is obtained by successive application of n layers, In_xGa_1-xN, which form sequence of the type In_x1Ga_1-x1N/In_x2Ga_1-x2N/…/In_xnGa_1-xnN/…/In_x2Ga_1-x2N/In_x1Ga_1-x1N, which members differ from each other with percentage content of indium in adjacent layers: x₁,x₂,…,x_n,…,x₂,x₁, so that x_i=x₁q^i-1, where i=2,…,n and q>1, as well as by the fact that the thickness of each subsequent well a_k, where k=2,…,n, increases as compared to thickness of previous well a_k-1 by constant value p>1, which is a factor of geometric progression a_k=a_k-1⋅p, and has height providing arrangement of only two levels of size quantisation in it. Each quantum well of the combined profile is separated from other pits of the combined profile with a GaN-based barrier layer. Increase in the radiation intensity at a given value of the total current through the heterostructure, which is the sum of the injection current into the wells and the through current, occurs by increasing the current of nonequilibrium charge carriers trapped by the quantum well and recombining therein, at simultaneous reduction of current generated by carriers, which flow through LED, without interaction with quantum wells in general, or captured pits, but subsequently emitted into barrier layers of heterostructure without their radiative recombination.

EFFECT: high intensity of radiation generated by a light-emitting diode heterostructure.

1 cl, 2 dwg