SEMICONDUCTOR LIGHT-EMITTING HETEROSTRUCTURE Russian patent published in 2009 - IPC H01L33/00 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor light-emitting devices, particularly to light-emitting diodes based on solid solutions of group three metal nitrides. In the semiconductor light-emitting heterostructure based on solid solutions of group three metal nitrides Al_xIn_yGa_1-(X+y)N (0≤x≤1, 0≤y≤1) with a p-n junction, containing a sequence of epitaxial layers, which form a region with p-conductivity type, in which an active region is formed, with a series of quantum wells, and a region with n-conductivity type, in which there is a current-limiting layer, according to the invention, thickness of barriers separating quantum wells is of the order of several nanometres.

EFFECT: invention allows for increasing external quantum efficiency by reducing probability of nonradiating Auger recombination.

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