INJECTION LASER Russian patent published in 2012 - IPC H01S5/65 H01S5/32 H01S5/42 

FIELD: optics.

SUBSTANCE: heterostructure based laser contains waveguide layer placed between wide-gap emitters of p and n-conductivity type that are simultaneously the limiting layers, active zone consisting of quantum-dimensional active layer, optical Fabry-Perot cavity and stripe ohmic contact under which the injection zone is located. In the waveguide layer outside the injection area there is the introduction of the area of semiconductor material with the width of energy gap that is less than the width of energy gap of active area. The factor of optical confinement of closed mode of abovementioned semiconductor material fits the ratio: where: - values of the compounds of optical confinement factor G for closed mode in the introduced area of semiconductor material with the width of energy gap that is less than the width of energy gap of active area, relative units; α_NB - optical losses related to interband absorption of closed mode radiation in the introduced area of semiconductor material with the width of energy gap that is less than the width of energy gap of active area, cm^-1.

EFFECT: increase of output optic power in both continuous and pulse current injection mode, as well as increased time stability of output active power.

13 cl, 4 dwg