FIELD: electronic engineering; renewable power supplies. SUBSTANCE: source semiconductor structures are joined together to form monolithic pile at pressure of 0.5-15 atm and temperature of 800-1300 C; in the process, either p-n junction separating charge carriers is formed at junction point or the latter forms ohmic contact due to tunnel effect in heavily doped regions; then pile is cut into structures and contacts are connected. EFFECT: improved efficiency of photoconverter; improved resistance to external effects. 1 cl, 3 dwg
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