FIELD: renewable power sources. SUBSTANCE: before baking chips from n-type silicon method involves orientation in same crystal axis and baking chips with aluminum foil in column under temperature of 650-750 C. Chip is heated up to this temperature for 10-60 min, kept for 5-30 min and cooled with temperature gradient of about 20-80 C per hour. Then column is cut into structures, contact system is developed on back side of chips and coated. EFFECT: increased efficiency, reliability and durability of photodetectors, decreased power consumption for their manufacturing. 2 cl, 2 dwg
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