TWO-SIDED SILICON SOLAR CELL AND METHOD OF MAKING SAME Russian patent published in 2016 - IPC H01L31/42 H01L31/18 

FIELD: electronics.

SUBSTANCE: invention relates to electronic engineering, specifically to devices for converting electromagnetic radiation into electrical energy, in particular, to silicon solar cells and technology of their production. In two-sided silicon solar cell, made in form of an array of series-switched micro-photocells with n⁺-p-p⁺ (p⁺-n-n⁺) structure, for which width of base is comparable with diffusion length of minority charge carriers of base region, and planes of p-n junctions are perpendicular to working surfaces, on working surfaces of solar cell there are passivation coatings made of insulating material with built-in electric charge, opposite in sign to type of conductivity of underlying silicon layers, working surfaces are oriented in crystallographic plane (111). For passivation of p-regions of photoconverter aluminium oxide coating is used, for n-regions - silicon nitride. Nanostructured coating of aluminium oxide is obtained by atomic layer deposition.

EFFECT: invention ensures production of high values of built-in charge and thereby reduced speed of surface recombination and increased efficiency of double-sided silicon solar cell.

2 cl, 1 dwg