LIGHT-EMITTING ELEMENT Russian patent published in 2009 - IPC H01L33/00 

FIELD: physics; semiconductors.

SUBSTANCE: invention relates to microelectronics, specifically to design of solid-state semiconductor light-emitting devices based on semiconductor material, and can be used when designing highly reliable and efficient light-emitting elements in a wide range of UV, visible, including white and infrared radiation. The light-emitting element has a housing (1) with an optically transparent cover (2), inside of which there a light-emitting crystal (3) with a semiconductor structure connected to the housing. The inside of the housing (1) is uniformly filled with light-emitting substance: doped cubic boron nitride powder (6). The dopant used can be at least one of Be, Cr and Mn, as well as rare-earth elements. The condition for uniform distribution inside the housing (1) of cubic boron nitride (6) doped with rare-earth elements provides for high uniformity of mono- and full-colour light luminescence.

EFFECT: increased reliability and service life of the device, increased light output due to optimisation of refraction coefficient.

3 cl, 15 ex, 1 dwg