FIELD: chemistry.
SUBSTANCE: semiconductor light-emitting device has an n-type region, a p-type region; a III-nitride light-emitting layer between the n- and p-type regions. The III-nitride light-emitting layer is doped to concentration of dopants between 6 × 1018 cm-3 and 5 × 1019 cm-3 and has III thickness between 50 Å and 250 Å; where the III-nitride light-emitting layer is configured to emit light having a maximum on wavelength higher than 390 nm, and content of InN in the light-emitting layer is gradient content. The invention also discloses four versions of the III-nitride light-emitting device having a light-emitting area with a double heterostructure.
EFFECT: high efficiency with high current density.
46 cl, 3 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| BORON-CONTAINING III-NITRIDE LIGHT-EMITTING DEVICE | 2010 |
|
RU2523747C2 |
| III-NITRIDE LIGHT-EMITTING DEVICES, GROWN ON TEMPLATES TO REDUCE STRAIN | 2007 |
|
RU2454753C2 |
| III-NITRIDE LIGHT-EMITTING DEVICES, GROWN ON STRUCTURE FOR REDUCING DEFORMATION | 2007 |
|
RU2466479C2 |
| METHOD OF MAKING LIGHT-EMITTING DEVICES BASED ON GROUP III NITRIDES GROWN ON STRESS RELIEF TEMPLATES | 2007 |
|
RU2470412C2 |
| LIGHT-EMITTING DEVICE BASED ON NITRIDE OF GROUP III ELEMENT WITH LIGHT-EMITTING LAYER WITH REDUCED VOLTAGES | 2012 |
|
RU2591246C2 |
| LIGHT-EMITTING INSTRUMENT BASED ON NITRIDE SEMICONDUCTOR | 2008 |
|
RU2369942C1 |
| SEMICONDUCTOR ELEMENT EMITTING LIGHT IN VISIBLE-SPECTRUM BLUE REGION | 2005 |
|
RU2277736C1 |
| SEMICONDUCTOR LIGHT-EMITTING ELEMENT | 2010 |
|
RU2456711C1 |
| LIGHT-EMITTING DEVICE BASED ON NITRIDE OF GROUP III ELEMENT, HAVING LOW-STRESS LIGHT-EMITTING LAYER (VERSIONS) | 2007 |
|
RU2457581C2 |
| SEMICONDUCTOR DEVICE WITH BUILT-IN CONTACTS (VERSIONS) AND METHOD OF MAKING SEMICONDUCTOR DEVICES WITH BUILT-IN CONTACTS (VERSIONS) | 2008 |
|
RU2394305C2 |
