METHOD OF PRODUCTION OF EFFICIENT INNER GETTER IN MONOCRYSTALLINE LOCATION-FREE SILICON PLATES Russian patent published in 2014 - IPC H01L21/322 

FIELD: process engineering.

SUBSTANCE: invention relates to production of location-free semiconductor silicon plates cut from monocrystals grown by the Czochralski method and used for making ICs and discrete electronic components. Proposed method comprises three-step heat treatment in inert atmosphere of argon at 1200±25°C for 30±10 s, at 800±10°C for 4.0±0.25 h (second step) and 1000±25°C for 16±0.25 h (third step).

EFFECT: efficient inner getter in large-diameter location-free silicon plates (150-300 mm).

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