PROCESS OF GETTERING WORKING OF SILICON SUBSTRATES Russian patent published in 1999 - IPC

FIELD: manufacture of discrete devices and integrated circuits. SUBSTANCE: process includes precipitation of polycrystalline silicon on nonworking side of silicon substrate and thermal treatment. Before thermal treatment surface of polycrystalline silicon is treated to render it amorphous with ion radiation with energy under which penetration depth of ions does not exceed thickness of layer of polycrystalline silicon. EFFECT: enhanced efficiency of gettering working thanks to diminished concentration of residual flaws in silicon substrates. 1 tbl