FIELD: electronic engineering. SUBSTANCE: method involves rendering semiconductor structures amorphous on non-working substrate side by applying medium energy ion irradiation. Before rendering the structures amorphous, the non-working substrate side is irradiated with protons which energy is equal to ion energy in the following irradiation treatment and at a dose being not lower than that used in rendering the structures amorphous under irradiation with ions. EFFECT: enhanced effectiveness of gettering treatment. 1 tbl
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