METHOD OF PRODUCING SEMI-INSULATING GALLIUM ARSENIDE Russian patent published in 1995 - IPC

FIELD: technology of semiconductors. SUBSTANCE: method involves irradiation of monocrystals by the fast neutrons, heating and cooling. Monocrystals were irradiated at the different compensation degree at the density flow Φ=(0,4-0)·10¹⁶ cm^-2.. Annealing is carried out at 850-900 C for 20 min, at the heating and cooling rate 4 C/min and 2 C/min, respectively. Prepared gallium arsenide shows improved optical heterogeneity δ₁≅ 5%, decreased optical absorption α=(6-7)·10^-3 cm^-1 at wavelength λ=10,6 μm 10.6 mcm and increased property thermostability. EFFECT: improved method of product producing. 1 tbl