METHOD OF CONTROLLING QUALITY OF DIELECTRIC FILMS OF RESISTIVE COMPONENTS OF HYBRID INTEGRATED CIRCUITS Russian patent published in 2010 - IPC G01R31/26 

FIELD: physics; control.

SUBSTANCE: invention relates to control and can be used for rapid control of quality of making semiconductor devices using a chemical method, particularly dielectric films of resistive components of hybrid integrated circuits. The method involves chemical etching of the dielectric film deposited on a resistive layer at a given depth determined by the colour of the surface of the film corresponding to the remaining thickness of the film, caused by interference of the reflected white light from the surface of the film and from the resistive layer. Quality of the dielectric film on chemical composition and structure of the crystal lattice of its material can be determined by comparing the obtained etching time with standard values. Chemical etching is done on process fields or on a test structure prepared together with resistive components of hybrid integrated circuits.

EFFECT: shorter control time.

3 cl