MICROWAVE HYBRID INTEGRATED CIRCUIT AND ITS MANUFACTURING PROCESS Russian patent published in 2006 - IPC H01P3/08 H05K3/38 C23C14/06 C23C14/35 

FIELD: electronic engineering; microwave integrated circuits.

SUBSTANCE: proposed microwave hybrid integrated circuit designed for use at frequencies exceeding 100 MHz has insulating substrate carrying two layers, one being adhesive sublayer and other, evaporated high-conductivity metal layer. Adhesive sublayer, 0.02 to 0.5 μm thick, is made of insulating material, for instance, silicon, aluminum, titanium, tantalum, and vanadium oxides, silicon or aluminum nitrides. Hybrid integrated circuit is produced by sequentially covering substrate with adhesive sublayer and high-conductivity metal layer followed by photolithography and etching of conducting layer forming its desired layout. Adhesive sublayer is applied by reactive magnetron spraying of target mixed up with argon and nitrogen. Time interval between application of adhesive layer and high-conductivity metal layer is not to exceed 10 s. Such manufacturing process makes it possible to reduce loss in microwave radiation through strip lines from 3.5 to 0.2 dB.

EFFECT: enhanced quality factor of strip lines and hybrid integrated circuits, reduced deviation of integrated-circuit components from desired values during their formation.

11 cl, 3 dwg