METHOD FOR MANUFACTURING A THIN-FILM CAPACITOR FOR ELECTRONIC EQUIPMENT Russian patent published in 2023 - IPC H01G4/02 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a method for manufacturing a thin-film capacitor in electronic technology and can be used as part of thin-film microcircuits, for example, for a microwave integrated circuit. The method includes formation of a dielectric element in the form of a thin film of a dielectric from silicon nitride in at least two stages, with a layer thickness at each stage of less than 25 nm, with an interval between stages formation of 20-40 s, in a single technological process of applying a thin film by photolithography and etching, whereas the number of stages of formation of a thin dielectric film N is determined from the expression N=d/s, where d is the specified total thickness of the dielectric film, nm, s is the same thickness of the dielectric film layer of the dielectric at each stage, nm.

EFFECT: increased specific capacitance, breakdown voltage, decreased in dielectric loss tangent (tg), as well as increased yield of suitable products while simplifying the manufacturing method

5 cl, 3 dwg, 1 tbl, 6 ex